Strong luminescence from erbium in Si/Si 1– x Ge x /Siquantum wellstructures
- 19 June 1997
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 33 (13) , 1182-1183
- https://doi.org/10.1049/el:19970750
Abstract
Sharp, strong luminescence has been obtained from erbium in silicon-germanium quantum well structures. The quantum well layers were implanted with erbium, followed by amorphisation using a silicon implant at 77 K. The structures were then recrystallised by solid phase epitaxial regrowth at 550°C. Compared with bulk silicon systems, stronger erbium activity was observed in the quantum well host.Keywords
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