Design of RF integrated circuits using SiGe bipolar technology

This publication has 9 references indexed in Scilit:

• Vertical profile optimization of very high frequency epitaxial Si- and SiGe-base bipolar transistors
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
• Ultra low power low noise amplifiers for wireless communications
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
• SiGe-technology and components for mobile communication systems
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
• Zero power consumption Si/SiGe HBT SPDT T/R antenna switch
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
• 1-W SiGe power HBTs for mobile communication
  IEEE Microwave and Guided Wave Letters, 1996
• A direct-conversion receiver for 900 MHz (ISM band) spread-spectrum digital cordless telephone
  IEEE Journal of Solid-State Circuits, 1996
• A comparative study on the various monolithic low noise amplifier circuit topologies for RF and microwave applications
  IEEE Journal of Solid-State Circuits, 1996
• Noise characteristics of transistors fabricated in an advanced silicon bipolar technology
  IEEE Transactions on Electron Devices, 1996
• High-efficient class F GaAs FET amplifiers operating with very low bias voltages for use in mobile telephones at 1.75 GHz
  IEEE Microwave and Guided Wave Letters, 1993