Density dependence of the electron-hole plasma lifetime in semiconductor quantum wells

We report on an investigation of the electron-hole (e-h) plasma decay time ${\mathrm{\tau }}_{\mathrm{tot}}$ versus e-h pair density in semiconductor quantum wells. We determine the density reached in a steady-state photoluminescence experiment from the optical spectra and compare it with the e-h pair generation rate. We find that in our samples only radiative e-h recombination is important, and that nonradiative processes and plasma expansion have negligible effects on ${\mathrm{\tau }}_{\mathrm{tot}}$. At plasma densities larger than 5×${10}^{12}$ ${\mathrm{cm}}^{\mathrm{-}2}$, we observe a strong nonlinear reduction of the e-h capture rate into the quantum wells.