Laser-assisted recrystallization to improve the surface morphology of CdTe epitaxial layers
- 1 February 1996
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 11 (2) , 248-251
- https://doi.org/10.1088/0268-1242/11/2/018
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Vapor phase epitaxy of Hg1−xCdxTe on CdTe heteroepitaxial substratesJournal of Crystal Growth, 1995
- Structure Study of the Hg1-xCdxTe VPE Layers Grown on CdTe MOCVD SubstratesMaterials Science Forum, 1995
- Short-time annealing of as-grown p-CdTe wafersSemiconductor Science and Technology, 1994
- Monolayer analysis in Rutherford backscattering spectroscopyApplied Physics Letters, 1994
- VPE of the Hg1−xCdx Te ohmic contact layers on p-CdTePhysica Status Solidi (a), 1993
- Optical properties of CdTe: Experiment and modelingJournal of Applied Physics, 1993
- Dislocations and strain relief in compositionally graded layersApplied Physics Letters, 1993
- Hyperfine interactions and Rutherford backscattering studies of Cd and Hg in CdTe single crystals and thin filmsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1992
- Slider LPE growth of MCT using in situ Te-solution preparationJournal of Crystal Growth, 1988