Evolution of Solid-State Amplification and Its Limitations
- 1 January 1967
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Education
- Vol. 10 (3) , 153-161
- https://doi.org/10.1109/te.1967.4320267
Abstract
Solid-state amplifying devices have two common features, 1) an inherent negative resistance, identified as the current or voltage source, and 2) a high electric field region, which manifests itself as the output impedance. A generalized equivalent circuit is developed using the above concepts. Several semiconductor amplifying devices are analyzed and their performances compared; the devices discussed include three-terminal devices, as well as twoterminal negative-resistance devices. The possibilities of increasing the gain-bandwidth product of semiconductor amplifiers is discussed and the additive-amplification technique for semiconductors is introduced.Keywords
This publication has 13 references indexed in Scilit:
- Characteristics of the metal-Oxide-semiconductor transistorsIEEE Transactions on Electron Devices, 1964
- The silicon insulated-gate field-effect transistorProceedings of the IEEE, 1963
- Stabilization of Silicon Surfaces by Thermally Grown Oxides*Bell System Technical Journal, 1959
- Junction Transistor Short-Circuit Current Gain and Phase DeterminationProceedings of the IRE, 1958
- Electrons, Holes, and TrapsProceedings of the IRE, 1958
- Dissected Amplifiers Using Negative ResistanceJournal of Applied Physics, 1954
- Unipolar "Field-Effect" TransistorProceedings of the IRE, 1953
- The Theory ofp-nJunctions in Semiconductors andp-nJunction TransistorsBell System Technical Journal, 1949
- The Transistor, A Semi-Conductor TriodePhysical Review B, 1948
- Operation of Ultra-High-Frequency Vacuum TubesBell System Technical Journal, 1935