A Systematic Change of Electrical Resistivity in Al5(MgxLi1-x)3.5∼4Cu1Icosahedral Quasicrystals

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Abstract
We have measured electrical resistivities from 4.2 K to room temperature in quaternary icosahedral-phase (I-phase) alloys of Al 5 (Mg x Li 1- x ) 3.5∼4 Cu 1 (0≤ x ≤1), where the e / a ratio changes from 2.1 to 2.4. The quality of the I-phase is decreased, the resistivity at 4.2 K decreases drastically from 800 to 60 µΩcm, and the temperature coefficient of resistivity changes from negative to positive as x increases. These results, together with the previously reported electronic specific-heat data, are interpreted by the presence of a structure-induced pseudogap, which is affected by the quasicrystallinity, in the electron density of states at the position corresponding to e / a =2.1.