A model for Schottky-barrier solar cell analysis

Publisher Website
Google Scholar
Abstract
A general model for the analysis of metal‐semiconductor solar cells is presented. The model takes into account the cell optical properties, carrier recombination effects, semiconductor minority‐carrier properties, series resistance, cell thickness, and active surface area. Numerical methods are used to solve the appropriate continuity equations and hence compute the photocurrent density under AMO conditions. The operation of the model is demonstrated using p‐ and n‐type Si and GaAs with Au being taken as the barrier metal. Calculations are presented showing the effect on solar energy conversion efficiency of surface recombination velocity, barrier height, minority‐carrier lifetime, barrier metal thickness, collecting grid configuration, and cell thickness. A comparison of practical and computed data for the Au/n‐GaAs system yields good agreement.