Spatial distribution of radiation-induced defects in p+-n InGaP solar cells
- 14 June 1999
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 74 (25) , 3812-3814
- https://doi.org/10.1063/1.124188
Abstract
The spatial distribution of radiation-induced, radiative recombination centers in single-junction InGaP solar cells irradiated by 1 MeV electrons or 3 MeV protons has been determined from cathodoluminescence (CL) spectra. The energy levels of the radiation-induced, nonradiative recombination centers were determined from the temperature dependence of the CL intensity.
Keywords
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