The effects of doping impurities and substrate crystallin on the formation of nickel suicides on silicon at 200–280° C
- 1 January 1988
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 17 (1) , 75-81
- https://doi.org/10.1007/bf02652237
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Effects of implantation impurities and substrate crystallinity on the formation of NiSi2 on silicon at 200–280 °CJournal of Applied Physics, 1987
- Formation of epitaxial NiSi2 of single orientation on (111) Si inside miniature size oxide openingsApplied Physics Letters, 1987
- Epitaxial growth of NiSi2 on ion-implanted silicon at 250–280 °CApplied Physics Letters, 1986
- Optimization of BF2+ implanted and rapidly annealed junctions in siliconJournal of Applied Physics, 1986
- Formation and Characterization of Transition-Metal SilicidesPublished by Elsevier ,1983
- Epitaxial regrowth of intrinsic, 31P-doped and compensated (31P+11B-doped) amorphous SiJournal of Applied Physics, 1982
- Compensating impurity effect on epitaxial regrowth rate of amorphized SiApplied Physics Letters, 1982
- Sheet resistivity and transmission electron microscope investigations of BF+2 -implanted siliconJournal of Applied Physics, 1981
- Implanted Source/Drain Junctions for Polysilicon Gate TechnologiesIBM Journal of Research and Development, 1980
- Transmission electron microscopy of cross sections of large scale integrated circuitsIEEE Transactions on Electron Devices, 1976