AlGaN/GaN HEMT With Integrated Recessed Schottky-Drain Protection Diode
- 11 August 2009
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 30 (9) , 901-903
- https://doi.org/10.1109/led.2009.2026437
Abstract
We present an AlGaN/GaN high-electron mobility transistor (HEMT) with an integrated recessed protection diode on the drain side of the transistor channel. Results from our Schottky-drain HEMT demonstrate an excellent reverse blocking with minor tradeoff in the on-state resistance for the complete device. The excellent quality of the forward diode characteristics indicates high robustness of the recess process. The reverse blocking capability of the diode is better than - 110 V. Physical-based device simulations give an insight in the respective electronic mechanisms. This is the first time that a recessed Schottky-drain diode integrated in a HEMT device is presented.Keywords
This publication has 5 references indexed in Scilit:
- GaN-based natural super junction diodes with multi-channel structuresPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2008
- Monolithic integration of lateral field-effect rectifier with normally-off HEMT for GaN-on-Si switch-mode power supply convertersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2008
- Punchthrough-Voltage Enhancement of AlGaN/GaN HEMTs Using AlGaN Double-Heterojunction ConfinementIEEE Transactions on Electron Devices, 2008
- C-Band GaN-HEMT Power Amplifier with Over 300-W Output Power and Over 50-% EfficiencyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2008
- Switch-mode amplifier ICs with over 90% efficiency for Class-S PAs using GaAs-HBTs and GaN-HEMTsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2008