Low-voltage organic thin-film transistors with large transconductance

1 October 2007

journal article
research article
Published by AIP Publishing in Journal of Applied Physics

Vol. 102 (7) , 074514
https://doi.org/10.1063/1.2794702

Abstract

We have developed an organic thin-film transistor(TFT) technology that aims at providing a good balance of static and dynamic performance parameters. An inverted staggered (bottom-gate, top-contact) device structure with patterned metal gates, a room-temperature-deposited gate dielectric providing a capacitance of 0.7 μ F ∕ cm 2 , and vacuum-deposited pentacene as the semiconductor were employed. The TFTs have a channel length of 10 μ m , a carrier mobility of 0.4 cm 2 ∕ V s , an on/off current ratio of 10 7 , a subthreshold swing of 100 mV /decade, and a transconductance per channel width of 40 μ S ∕ mm . Ring oscillators operate with supply voltages as low as 2 V and with signal propagation delays as low as 200 μ s per stage.

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