Epitaxial SrTiO3 Thin Films Grown by ArF Excimer Laser Deposition
- 1 April 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (4B) , L511
- https://doi.org/10.1143/jjap.31.l511
Abstract
SrTiO3 (STO) thin films were prepared by an ArF excimer laser deposition method. At the growth temperature of 630°C, the natural orientation of STO was significantly changed from (111) to (100) and (110). The ratio of X-ray diffraction intensities (100)/(200) was closest to the ideal value when grown at 660°C, resulting in minimized disorder of atomic arrangement. Epitaxial STO films were obtained on STO(100) and MgO(100) substrates, and on an YBaCuO(001) epitaxial film. They showed resistivity in excess of 5×1010 Ω·cm and dielectric constant as high as 140ε0 at room temperature. The maximum dielectric constant of 440ε0 was obtained at 40 K.Keywords
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