Reverse recovery in p-n junction diodes with built-in drift fields
- 30 November 1983
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 26 (11) , 1077-1081
- https://doi.org/10.1016/0038-1101(83)90005-9
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Reverse recovery time measurements of epitaxial silicon p-n junctions at low temperaturesSolid-State Electronics, 1964
- Analysis and characterization of P-N junction diode switchingIEEE Transactions on Electron Devices, 1964
- Switching response of graded-base PN junction diodesIRE Transactions on Electron Devices, 1962
- Reverse transient characteristics of a P-N junction diode due to minority carrier storageIRE Transactions on Electron Devices, 1962
- Transient Response of a p-n JunctionJournal of Applied Physics, 1954
- Charge Storage in Junction DiodesJournal of Applied Physics, 1954