Reverse recovery time measurements of epitaxial silicon p-n junctions at low temperatures
- 30 November 1964
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 7 (11) , 823-831
- https://doi.org/10.1016/0038-1101(64)90134-0
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
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