Electron-hole pair creation and metal/semiconductor interface scattering observed by ballistic-electron-emission microscopy
- 15 March 1992
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 45 (11) , 6325-6328
- https://doi.org/10.1103/physrevb.45.6325
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
- Phonon scattering and quantum mechanical reflection at the Schottky barrierJournal of Applied Physics, 1991
- Ballistic electron emission spectroscopy of metals on GaP(110)Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Theory of ballistic-electron-emission spectroscopy of/Si(111) interfacesPhysical Review Letters, 1991
- Ballistic-electron-emission microscopy and spectroscopy of GaP(110)-metal interfacesPhysical Review Letters, 1991
- Role of elastic scattering in ballistic-electron-emission microscopy of Au/Si(001) and Au/Si(111) interfacesPhysical Review B, 1991
- Direct spectroscopy of electron and hole scatteringPhysical Review Letters, 1990
- Observation of Interface Band Structure by Ballistic-Electron-Emission MicroscopyPhysical Review Letters, 1988
- Direct investigation of subsurface interface electronic structure by ballistic-electron-emission microscopyPhysical Review Letters, 1988
- Reliable and versatile scanning tunneling microscopeReview of Scientific Instruments, 1988
- Photoemission studies of atomic redistribution at gold–silicon and aluminum–silicon interfacesJournal of Vacuum Science & Technology A, 1984