Structure, defect and transport properties of highly photoconductive a-SiGe:H and a-SiC:H alloys

This publication has 6 references indexed in Scilit:

• Density of Mid-Gap States for Undoped a-Si_1-xGe_x:H and a-Si:H Determined by Steady-State Heterojunction-Monitored Capacitance Method
  Japanese Journal of Applied Physics, 1988
• Guiding principle for preparing highly photosensitive Si-based amorphous alloys
  Journal of Non-Crystalline Solids, 1987
• Hydrogenated amorphous silicon carbide as a window material for high efficiency a-Si solar cells
  Solar Energy Materials, 1982
• Electronic Properties of Amorphous Si_xGe_1−x:H Films
  Physica Status Solidi (b), 1980
• Optical properties of amorphous SixGe1−x(H) alloys prepared by R.F. Glow discharge
  Solid State Communications, 1977
• Electrical and optical properties of amorphous silicon carbide, silicon nitride and germanium carbide prepared by the glow discharge technique
  Philosophical Magazine, 1977