Ferroelectric Films for Integrated Electronics
- 1 January 1993
- book chapter
- Published by Elsevier
- Vol. 17, 225-300
- https://doi.org/10.1016/b978-0-12-533017-6.50009-9
Abstract
No abstract availableKeywords
This publication has 97 references indexed in Scilit:
- Nanosecond switching of thin ferroelectric filmsApplied Physics Letters, 1991
- Pulsed laser deposition and ferroelectric characterization of bismuth titanate filmsApplied Physics Letters, 1991
- Preparation of Bi4Ti3O12 films on a single-crystal sapphire substrate with electron cyclotron resonance plasma sputteringApplied Physics Letters, 1991
- High critical currents in strained epitaxial YBa2Cu3O7−δ on SiApplied Physics Letters, 1990
- Growth of BaTiO3SrTiO3 thin films by r.f. magnetron sputteringThin Solid Films, 1989
- Characterization of Pb(Zr,Ti)O3 thin films deposited from multielement metal targetsJournal of Applied Physics, 1988
- Switching kinetics of lead zirconate titanate submicron thin-film memoriesJournal of Applied Physics, 1988
- Ferroelectric (Pb,La)(Zr,Ti)O3 epitaxial thin films on sapphire grown by rf-planar magnetron sputteringJournal of Applied Physics, 1986
- A Metal-Insulator-Semiconductor (MIS) Device Using a Ferroelectric Polymer Thin Film in the Gate InsulatorJapanese Journal of Applied Physics, 1986
- Ferroelectric properties of vinylidene fluoride-trifluoroethylene copolymersJournal of Applied Physics, 1981