A Ka-Band GaAs Monolithic Phase Shifter
- 1 December 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 31 (12) , 1077-1083
- https://doi.org/10.1109/tmtt.1983.1131665
Abstract
The design and performance of a GaAs monolithic 1800 one-bit switched line phase shifter test circuit for Ka-band operation is presented. A self-aligned gate (SAG) fabrication technique is also described that reduces resistive parasitic in the switching FET's. Over the 27.5-30 GHz band, typical measured differential insertion phase is within 10-20° of the ideal time delay characteristic. Over the same band, the insertion loss for the SAG phase shifter is about 2.5-3 dB per bit. The SAG fabrication technique holds promise in reducing phase shifter insertion loss to about 1.5 dB/bit for 30-GHz operation.Keywords
This publication has 9 references indexed in Scilit:
- Use of Switching Q in the Design of FET Microwave SwitchesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Microwave GaAs FET SwitchingPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- A Monolithic Single-Chip X-Band Four-Bit Phase ShifterIEEE Transactions on Microwave Theory and Techniques, 1982
- Resonated GaAs FET devices for microwave switchingIEEE Transactions on Electron Devices, 1981
- Ti/W silicide gate technology for self-aligned GaAs MESFET VLSISPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1981
- Design of waveguide-to-microstrip transitions specially suited to millimetre-wave applicationsElectronics Letters, 1977
- A New Integrated Waveguide-Microstrip Transition (Short Papers)IEEE Transactions on Microwave Theory and Techniques, 1976
- Quality factor of switching diodes for digital modulationProceedings of the IEEE, 1970
- Microstrip Lines for Microwave Integrated CircuitsBell System Technical Journal, 1969