High-energy ion channeling study of the atomic displacement of Si(111) surfaces induced by Ag thin films
- 1 February 1990
- journal article
- Published by Elsevier in Surface Science
- Vol. 226 (1-2) , 77-88
- https://doi.org/10.1016/0039-6028(90)90155-2
Abstract
No abstract availableFunding Information
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 37 references indexed in Scilit:
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