Low temperature silicon and Si1−xGex epitaxy by rapid themal chemical vapour deposition using hydrides
- 1 December 1992
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 222 (1-2) , 52-56
- https://doi.org/10.1016/0040-6090(92)90037-c
Abstract
No abstract availableKeywords
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