Formation of delta-doped, buried conducting layers in diamond, by high-energy, B-ion implantation
- 1 October 1998
- journal article
- Published by Elsevier in Diamond and Related Materials
- Vol. 7 (10) , 1429-1432
- https://doi.org/10.1016/s0925-9635(98)00231-3
Abstract
No abstract availableKeywords
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