Characterization of pentacene organic thin film transistors fabricated on SiNx films by non-photolithographic processes
- 1 December 2002
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 420-421, 492-496
- https://doi.org/10.1016/s0040-6090(02)00852-0
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- On the intrinsic limits of pentacene field-effect transistorsOrganic Electronics, 2000
- A reduced complexity process for organic thin film transistorsApplied Physics Letters, 2000
- Ambipolar Pentacene Field-Effect Transistors and InvertersScience, 2000
- Pentacene organic thin-film transistors for circuit and display applicationsIEEE Transactions on Electron Devices, 1999
- Fast organic thin-film transistor circuitsIEEE Electron Device Letters, 1999
- Field-effect transistors comprising molecular beam deposited α,ω-di-hexyl-hexathienylene and polymeric insulatorSynthetic Metals, 1998
- Stacked pentacene layer organic thin-film transistors with improved characteristicsIEEE Electron Device Letters, 1997
- Field-effect transistors made from solution-processed organic semiconductorsSynthetic Metals, 1997
- Molecular order in organic-based field-effect transistorsSynthetic Metals, 1996
- Logic Gates Made from Polymer Transistors and Their Use in Ring OscillatorsScience, 1995