Interface Study on GaAs-on-Si by Transmission Electron Microscopy
- 1 March 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (3A) , L293
- https://doi.org/10.1143/jjap.27.l293
Abstract
A correlation between the surface and interface defects in GaAs-on-Si structures was examined by KOH etching and transmission electron microscopy. Line-shaped etch pits revealed on the GaAs-on-Si (100) were attributed to twins produced at the interface. This twin generation was avoided by off-setting the substrate orientation. An alternative for this is the application of an additional heat treatment after the GaAs buffer layer is grown. In this case, the twin propagation ends on the buffer layer.Keywords
This publication has 8 references indexed in Scilit:
- AlGaAs/GaAs MQW Laser Diode Fabricated on Si Substrates by MOCVDJapanese Journal of Applied Physics, 1987
- Low-threshold high-efficiency AlGaAs-GaAs double-heterostructure injection lasers grown on Si substrates by metalorganic chemical vapor depositionApplied Physics Letters, 1987
- Performance of quarter-micron GaAs metal-semiconductor field-effect transistors on Si substratesApplied Physics Letters, 1986
- 14.5% conversion efficiency GaAs solar cell fabricated on Si substratesApplied Physics Letters, 1986
- Growth of high quality GaAs layers on Si substrates by MOCVDJournal of Crystal Growth, 1986
- Material properties of high-quality GaAs epitaxial layers grown on Si substratesJournal of Applied Physics, 1986
- Low threshold laser operation at room temperature in GaAs/(Al,Ga)As structures grown directly on (100)SiApplied Physics Letters, 1986
- Characteristics of GaAs/AlGaAs MODFETs grown directly on (100) siliconElectronics Letters, 1984