Electrical Overstress Failure Modeling for Bipolar Semiconductor Components
- 1 December 1978
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Components, Hybrids, and Manufacturing Technology
- Vol. 1 (4) , 345-353
- https://doi.org/10.1109/tchmt.1978.1135310
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Second breakdown and damage in junction devicesIEEE Transactions on Electron Devices, 1973
- Pulse Power Failure Modes in SemiconductorsIEEE Transactions on Nuclear Science, 1970
- Space-charge-induced negative resistance in avalanche diodesIEEE Transactions on Electron Devices, 1968
- Determination of Threshold Failure Levels of Semiconductor Diodes and Transistors Due to Pulse VoltagesIEEE Transactions on Nuclear Science, 1968
- Avalanche characteristics and failure mechanism of high voltage diodesIEEE Transactions on Electron Devices, 1966