Deposition of buffer layers for MOCVD of Y1Ba2Cu3O7−x on GaAs
- 10 May 1993
- journal article
- Published by Elsevier in Journal of Alloys and Compounds
- Vol. 195, 295-298
- https://doi.org/10.1016/0925-8388(93)90743-7
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Epitaxial growth of MgO on GaAs(001) for growing epitaxial BaTiO3 thin films by pulsed laser depositionApplied Physics Letters, 1992
- Y2O3 single crystalline substrate for epitaxial growth of high T C superconducting thin filmsApplied Physics Letters, 1991
- High-quality Y1Ba2Cu3O7−x thin films on polycrystalline MgO by temperature-controlled chemical vapor depositionApplied Physics Letters, 1991