Epitaxial growth of MgO on GaAs(001) for growing epitaxial BaTiO3 thin films by pulsed laser deposition
- 9 March 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (10) , 1199-1201
- https://doi.org/10.1063/1.107404
Abstract
MgO buffer layers were deposited on GaAs by pulsed laser deposition for epitaxial growth of BaTiO3. MgO was grown epitaxially on GaAs for the first time; the orientation is (001) on GaAs(001). The best crystallographic quality was obtained at 350 °C in 5×10−6 Torr O2. BaTiO3 films with (001) orientation grew epitaxially on MgO/GaAs. The in‐plane epitaxial relationship was BaTiO3[100]∥ MgO[100]∥ GaAs[100] in spite of a large lattice mismatch (25.5%) between MgO and GaAs.Keywords
This publication has 17 references indexed in Scilit:
- Epitaxial LiNbO3 thin films prepared by a sol-gel processMaterials Letters, 1991
- Observation of the early stages of heteroepitactic growth of BaTiO3 thin-filmsJournal of Materials Research, 1990
- Low-temperature growth of MgO by molecular-beam epitaxyPhysical Review B, 1990
- Processing and Structural Characterization of Ferroelectric Thin Films Deposited by Ion Beam SputteringMRS Proceedings, 1990
- Surface-stoichiometry dependence of As2 desorption and As4 ‘‘reflection’’ from GaAs(001)Journal of Vacuum Science & Technology A, 1989
- Heteroepitaxial Growth of Yttria-Stabilized Zirconia (YSZ) on SiliconJapanese Journal of Applied Physics, 1988
- Interfacial Superstructure of AlN/n-GaAs(001) System Fabricated by Metalorganic Chemical Vapor DepositionJapanese Journal of Applied Physics, 1988
- Layer-by-layer sublimation observed by reflection high-energy electron diffraction intensity oscillation in a molecular beam epitaxy systemApplied Physics Letters, 1985
- Second harmonic generation in a sputtered LiNbO3 film on MgOJournal of Crystal Growth, 1978
- Epitaxial growth of ferroelectric PLZT [(Pb, La)(Zr, Ti)O3] thin filmsJournal of Crystal Growth, 1978