Visible light-emitting diodes using a-plane GaN–InGaN multiple quantum wells over r-plane sapphire
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- 3 May 2004
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 84 (18) , 3663-3665
- https://doi.org/10.1063/1.1738938
Abstract
We report blue-purple pn-junction light-emitting diodes (LEDs) with a-plane GaN–InGaN multiple quantum well active region. The LEDs were grown over r-plane sapphire substrates. Our study has shown the low pump intensity photoluminencence and electroluminescence to be dominated by emission from the band-tail states which then saturates rapidly giving rise to band-edge emission.Keywords
This publication has 9 references indexed in Scilit:
- GaN/AlGaN multiple quantum wells on a-plane GaN pillars for stripe-geometry nonpolar ultraviolet light-emitting devicesApplied Physics Letters, 2003
- Ultraviolet Light Emitting Diodes Using Non-Polar a-Plane GaN-AlGaN Multiple Quantum WellsJapanese Journal of Applied Physics, 2003
- Defect reduction in (112̄0) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxyApplied Physics Letters, 2003
- GaN homoepitaxy on freestanding (11̄00) oriented GaN substratesApplied Physics Letters, 2002
- Threading dislocation reduction via laterally overgrown nonpolar (112̄0) a-plane GaNApplied Physics Letters, 2002
- Molecular-beam epitaxy of GaN/AlxGa1−xN multiple quantum wells on R-plane (101̄2) sapphire substratesApplied Physics Letters, 2002
- Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wellsApplied Physics Letters, 2002
- Influence of microstructure on the carrier concentration of Mg-doped GaN filmsApplied Physics Letters, 2001
- Exciton localization in InGaN quantum well devicesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1998