Direct patterning of single electron tunneling transistors by high resolution electron beam lithography on highly doped molecular beam epitaxy grown silicon films
- 1 November 1998
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 16 (6) , 3804-3807
- https://doi.org/10.1116/1.590412
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Single-electron transistors fabricated from a doped-Si film in a silicon-on-insulator substrateApplied Physics Letters, 1998
- Gate controlled Coulomb blockade effects in the conduction of a silicon quantum wireJournal of Applied Physics, 1997
- Coulomb Blockade Effects in Edge Quantum Wire SOI MOSFETsJapanese Journal of Applied Physics, 1997
- Coulomb blockade oscillations at room temperature in a Si quantum wire metal-oxide-semiconductor field-effect transistor fabricated by anisotropic etching on a silicon-on-insulator substrateApplied Physics Letters, 1996
- Single hole quantum dot transistors in siliconApplied Physics Letters, 1995
- Transport properties of silicon nanostructures fabricated on SIMOX substratesMicroelectronic Engineering, 1995
- Enhancement of Coulomb blockade in semiconductor tunnel junctionsApplied Physics Letters, 1995
- Damage Induced by Electron Cyclotron Resonance Plasma Etching on Silicon SurfaceJapanese Journal of Applied Physics, 1991
- Conductance oscillations periodic in the density of one-dimensional electron gasesPhysical Review B, 1990