Transport properties of silicon nanostructures fabricated on SIMOX substrates
- 30 June 1995
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 28 (1-4) , 399-405
- https://doi.org/10.1016/0167-9317(95)00084-l
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Counter-oxidation of superficial Si in single-crystalline Si on SiO2 structureApplied Physics Letters, 1994
- Quantum conductance of point contacts in Si inversion layersPhysical Review B, 1992
- Quantized conductance in a long silicon inversion wirePhysical Review B, 1992
- Subfemtojoule deep submicrometer-gate CMOS built in ultra-thin Si film on SIMOX substratesIEEE Transactions on Electron Devices, 1991
- Single-electron charging and periodic conductance resonances in GaAs nanostructuresPhysical Review Letters, 1990
- One-dimensional transport and the quantisation of the ballistic resistanceJournal of Physics C: Solid State Physics, 1988
- Quantized conductance of point contacts in a two-dimensional electron gasPhysical Review Letters, 1988
- Observation of single-electron charging effects in small tunnel junctionsPhysical Review Letters, 1987
- Coulomb blockade of single-electron tunneling, and coherent oscillations in small tunnel junctionsJournal of Low Temperature Physics, 1986
- C.M.O.S. devices fabricated on buried SiO 2 layers formed by oxygen implantation into siliconElectronics Letters, 1978