Counter-oxidation of superficial Si in single-crystalline Si on SiO2 structure
- 5 December 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (23) , 2987-2989
- https://doi.org/10.1063/1.112485
Abstract
This work proposes an oxidation mechanism for single‐crystalline Si overlying a buried SiO2 layer (SOI wafer). Experimental results show that not only the surface oxide but also the buried oxide layer of the SOI wafer grows during the thermal oxidation process. The oxidation behavior is analyzed with a simple model including oxygen diffusion through the superficial single crystalline Si layer, which agrees well with the experimental data. Furthermore, oxygen penetration through the superficial Si layer is verified by oxidation experiments using isotope oxygen.Keywords
This publication has 9 references indexed in Scilit:
- Oxygen isotopic exchange between an 18O+ implanted Si layer and a natural SiO2 capping layer during high-temperature annealingApplied Physics Letters, 1993
- 0.1- mu m-gate, ultrathin-film CMOS devices using SIMOX substrate with 80-nm-thick buried oxide layerIEEE Transactions on Electron Devices, 1993
- SIMOX wafers with low dislocation density produced by a 100-mA-class high-current oxygen implanterNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1991
- Stability of interfacial oxide layers during silicon wafer bondingJournal of Applied Physics, 1989
- Diffusivity of oxygen in silicon at the donor formation temperatureApplied Physics Letters, 1983
- C.M.O.S. devices fabricated on buried SiO 2 layers formed by oxygen implantation into siliconElectronics Letters, 1978
- General Relationship for the Thermal Oxidation of SiliconJournal of Applied Physics, 1965
- Permeation of Gaseous Oxygen through Vitreous SilicaNature, 1961
- The solubility of oxygen in siliconJournal of Physics and Chemistry of Solids, 1959