Interband transitions in InAsxP1−x/InP strained multiple quantum wells

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Abstract
We report the optical study of the interband transitions in InAsxP1−x/InP strained‐layer multiple quantum wells grown by gas‐source molecular beam epitaxy. Low‐temperature photoluminescence, photoluminescence excitation, and room temperature photomodulated transmission measurements were performed to investigate optical interband transitions. In addition to transitions associated with the heavy‐hole and the light‐hole bands, a transition involved with the spin‐orbit split‐off band was observed. We also observed spectral linewidth broadening due to compositional inhomogeneity and layer‐thickness fluctuations from the sample using short‐period superlattices as the well materials. Calculations based on the envelope‐function approximation and phenomenological deformation potential theory, including both band nonparabolicity and strain‐induced valence‐band mixing, were compared with experimental data to identify the optical transitions between quantized states in the wells. We found good agreement between theory and experiment.