Temperature dependence of hole mobility in n-type InSb upon electron bombardment
- 31 December 1978
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 28 (12) , 989-992
- https://doi.org/10.1016/0038-1098(78)90655-5
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- A theory of the effects of carrier-carrier scattering on mobility in semiconductorsJournal of Physics and Chemistry of Solids, 1960
- Photoconductive and Photoelectromagnetic Effects in InSbJournal of Applied Physics, 1956
- Hall Effect and Conductivity of InSbPhysical Review B, 1955
- Electrical Properties of-Type Indium Antimonide at Low TemperaturesPhysical Review B, 1955