Very Low Pressure Oxidation of Si and Ge Surfaces
- 1 January 1990
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Automatic kelvin probe compatible with ultrahigh vacuumReview of Scientific Instruments, 1989
- Electronic and geometric structure of Si(111)-(7 × 7) and Si(001) surfacesSurface Science, 1987
- Optical properties and atomic structure of cleaved silicon and germanium (111) surfacesSurface Science Reports, 1986
- Metastable molecular precursor for the dissociative adsorption of oxygen on Si(111)Physical Review Letters, 1985
- Probing valence states with photoemission and inverse photoemissionJournal of Vacuum Science & Technology A, 1984
- Surface photovoltage, band-bending and surface states on a-Si : HSurface Science, 1980
- Lattice defects and surface properties of clean germaniumSurface Science, 1967
- Surface states on clean siliconSurface Science, 1964
- Some Experiments Using a Vacuum-Cleaned Silicon p-n JunctionJournal of Applied Physics, 1961
- A NEW METHOD OF MEASURING CONTACT POTENTIAL DIFFERENCES IN METALSReview of Scientific Instruments, 1932