Enhancement- and Depletion-Mode GaAs MESFETs Grown by Laser-Assisted MOVPE
- 1 November 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (11A) , L1899
- https://doi.org/10.1143/jjap.28.l1899
Abstract
We have fabricated a pair of GaAs MESFETs operating in different modes, i.e., enhancement and depletion modes, on a single epitaxial wafer on the basis of laser-assisted metalorganic vapor phase epitaxy using tetramethylsilane as a photosensitive n-type dopant. The threshold voltages for an enhancement-mode MESFET fabricated on a laser-unirradiated part (n=3.5×1016 cm-3) and a depletion-mode MESFET on a laser-irradiated part (n +=4.5×1017 cm-3) were +0.10 and -0.65 V, respectively. The drain current-voltage characteristics of two types of MESFETs showed a transconductance of about 13 mS/mm and a saturation drain current of about 250 µA.Keywords
This publication has 1 reference indexed in Scilit:
- Laser-Irradiation Effects on the Incorporation of Impurities in GaAs during MOVPE GrowthJapanese Journal of Applied Physics, 1986