Laser-Irradiation Effects on the Incorporation of Impurities in GaAs during MOVPE Growth
- 1 December 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (12A) , L967
- https://doi.org/10.1143/jjap.25.l967
Abstract
Laser-irradiation effects on the incorporation of n- and p-type impurities in GaAs have been studied by irradiating the substrate with an ArF excimer laser light during MOVPE growth. An n-type dopant source of TMSi is decomposed effectively by laser excitation, resulting in a dramatic increase in the carrier (electron) concentration. The decomposition of a p-type dopant source of DMZn is not influenced by laser irradiation at a growth temperature of 700°C. Si- or Zn-doped GaAs layers in the irradiated area are of high crystalline quality.Keywords
This publication has 4 references indexed in Scilit:
- Selective area control of material properties in laser-assisted MOVPE of GaAs and AlGaAsJournal of Crystal Growth, 1986
- Compensation in heavily doped n-type InP and GaAsJournal of Applied Physics, 1985
- Zinc Doping of MOCVD GaAsJournal of Crystal Growth, 1984
- Laser purification of silane: impurity reduction to the sub-part-per-million levelJournal of Applied Physics, 1980