Zinc Doping of MOCVD GaAs
- 1 September 1984
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 68 (1) , 44-47
- https://doi.org/10.1016/0022-0248(84)90395-6
Abstract
No abstract availableThis publication has 18 references indexed in Scilit:
- heterojunction bipolar transistors grown by MOCVDJournal of Crystal Growth, 1984
- Ultrafast GaAs microwave PIN diodeElectronics Letters, 1983
- Investigations on low temperature mo-cvd growth of GaAsJournal of Electronic Materials, 1983
- Low-Pressure Chemical Vapor DepositionAnnual Review of Materials Science, 1982
- Low temperature growth of MOCVD GaAs layers at atmospheric pressureJournal of Crystal Growth, 1982
- Etude du dopage de l'arséniure de gallium par la technique d'épitaxie en phase vapeur aux organométalliquesRevue de Physique Appliquée, 1982
- Characterization of organometallic VPE grown GaAs and AlGaAs for solar cell applicationsJournal of Crystal Growth, 1981
- High purity GaAs prepared from trimethylgallium and arsineJournal of Crystal Growth, 1981
- Characterization of GaAs epitaxial layers grown in a radiation heated Mo-CVD reactorJournal of Electronic Materials, 1981
- Heteroepitaxial GaAs on Aluminum OxideJournal of the Electrochemical Society, 1972