Low temperature growth of MOCVD GaAs layers at atmospheric pressure
- 31 May 1982
- journal article
- other
- Published by Elsevier in Journal of Crystal Growth
- Vol. 57 (3) , 605-606
- https://doi.org/10.1016/0022-0248(82)90082-3
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- A new low temperature III–V multilayer growth technique: Vacuum metalorganic chemical vapor depositionJournal of Applied Physics, 1981
- High purity GaAs prepared from trimethylgallium and arsineJournal of Crystal Growth, 1981
- A study of the growth mechanism of epitaxial GaAs as grown by the technique of metal organic vapour phase epitaxyJournal of Crystal Growth, 1981
- Various chemical mechanisms for the crystal growth of III–V semiconductors using coordination compounds as starting material in the MOCVD processJournal of Crystal Growth, 1981
- Characterization of GaAs epitaxial layers grown in a radiation heated Mo-CVD reactorJournal of Electronic Materials, 1981
- A New Method for Growing GaAs Epilayers by Low Pressure OrganometallicsJournal of the Electrochemical Society, 1979