ONO Interpoly Dielectric Scaling Limit For Non-volatile Memory Devices

Publisher Website

1 January 1993

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 85-86
https://doi.org/10.1109/vlsit.1993.760257

Abstract

No abstract available

Keywords

This publication has 2 references indexed in Scilit:

Bottom-oxide scaling for thin nitride/oxide interpoly dielectric in stacked-gate nonvolatile memory cells
IEEE Transactions on Electron Devices, 1992
Polyoxide thinning limitation and superior ONO interpoly dielectric for nonvolatile memory devices
IEEE Transactions on Electron Devices, 1991