Focused ion beam sample preparation, transmission electron microscopy and electron energy loss spectroscopy analysis of advanced CMOS silicon technology interconnections
- 30 November 1997
- journal article
- conference paper
- Published by Elsevier in Microelectronic Engineering
- Vol. 37-38 (1-4) , 49-57
- https://doi.org/10.1016/s0167-9317(97)00093-2
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Microscopic studies of semiconductor lasers utilizing a combination of transmission electron microscopy, electroluminescence imaging, and focused ion beam sputteringApplied Physics Letters, 1993
- Design and first applications of a post-column imaging filterMicroscopy Microanalysis Microstructures, 1992
- Fibxtem— Focussed Ion Beam Milling for TEM Sample PreparationMRS Proceedings, 1991