Annealing effects in light-emitting Si nanostructures formed in SiO2 by ion implantation and transient preheating
- 1 May 1997
- journal article
- conference paper
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 127-128, 583-586
- https://doi.org/10.1016/s0168-583x(96)01134-2
Abstract
No abstract availableKeywords
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