Frequency dispersion and modulated signal distortion characteristics of gaas power MESFETs at large signal operation
- 1 November 1994
- journal article
- research article
- Published by Wiley in Electronics and Communications in Japan (Part II: Electronics)
- Vol. 77 (11) , 82-88
- https://doi.org/10.1002/ecjb.4420771108
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Modeling deep-level trap effects in GaAs MESFETsIEEE Transactions on Electron Devices, 1989
- A low-distortion K-band GaAs power FETIEEE Transactions on Microwave Theory and Techniques, 1988
- Low-field low-frequency dispersion of transconductance in GaAs MESFETs with implications for other rate-dependent anomaliesIEEE Transactions on Electron Devices, 1988
- Analysis of capacitance and transconductance frequency dispersions in MESFETs for surface characterizationSolid-State Electronics, 1986