Mn-Activated Y2O3–GeO2 Phosphors for Thin-Film Electroluminescent Devices
- 1 August 2001
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 40 (8B) , L864-866
- https://doi.org/10.1143/jjap.40.l864
Abstract
A new multicomponent oxide phosphor, Mn-activated Y2O3–GeO2, is demonstrated to be very promising as the thin-film emitting layer for thin-film electroluminescent (TFEL) devices. High-luminance yellow emissions were obtained in TFEL devices using (Y2O3–GeO2):Mn thin films prepared with a GeO2 content of 0 to 100 mol%: 1756, 2500, 758 and 1629 cd/m2 in 1-kHz-driven TFEL devices fabricated using Y2O3:Mn, Y4GeO8:Mn, Y2GeO5:Mn and Y2Ge2O7:Mn phosphor thin films, i.e., a GeO2 content of 0, 33, 50 or 67 mol%, respectively. In addition, high luminous efficiencies of 2.8, 3.4, 1.5 and 4.5 lm/W, respectively, were obtained in these TFEL devices using a driving voltage at 60 Hz.Keywords
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