Fabrication of high-speed GaAs photoconductive pulse generators and sampling gates by ion implantation
- 1 January 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 35 (12) , 2343-2348
- https://doi.org/10.1109/16.8812
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- High-speed optoelectronic pulse generation and sampling systemIEEE Transactions on Instrumentation and Measurement, 1988
- A Study of Postannealing and in situ Annealing of Silicon Wafers Implanted with a High Dose of OxygenJournal of the Electrochemical Society, 1988
- Electrooptic sampling in GaAs integrated circuitsIEEE Journal of Quantum Electronics, 1986
- Subpicosecond electrooptic sampling: Principles and applicationsIEEE Journal of Quantum Electronics, 1986
- GaAs/(GaAl)As heterojunction bipolar transistors using a self-aligned substitutional emitter processIEEE Electron Device Letters, 1986
- Subpicosecond Electro-Optic Sampling Using Coplanar Strip Transmission LinesPublished by Springer Nature ,1984
- Picosecond optical electronic sampling: Characterization of high-speed photodetectorsApplied Physics Letters, 1982
- Heterostructure bipolar transistors and integrated circuitsProceedings of the IEEE, 1982
- Generation of optical pulses shorter than 0.1 psec by colliding pulse mode lockingApplied Physics Letters, 1981
- Optical Absorption of Gallium Arsenide between 0.6 and 2.75 eVPhysical Review B, 1962