Transient Photocurrent in Amorphous (As2Se3):Te Thin Films
- 1 July 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (7A) , L458
- https://doi.org/10.1143/jjap.23.l458
Abstract
Effects on the transport properties and gap states in a-As2Se3 films produced by the additive Te (2 at.%, 4 at.%, 6 at.%) have been studied by measuring transient photocurrents with a time-of-flight technique. The experimental results are interpreted in terms of a trap-controlled band transport as the mechanism of the dispersive carrier transport in these films. It is found that as the amount of Te increases, the hole drift mobilities decrease, the profiles of gap states remain exponential and their characteristic temperature increases slightly.Keywords
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