Measurements and comparison of low frequency noise in npn and pnp polysilicon emitter bipolar junction transistors
- 1 July 1998
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 84 (1) , 625-633
- https://doi.org/10.1063/1.368066
Abstract
Low frequency noise characteristics of new high voltage, high performance complementary polysilicon emitter bipolar transistors have been studied. The influence of the base biasing resistance, emitter geometry, and temperature on the noise spectra are discussed. The npn transistors studied exhibited 1/f and shot noise. The pnp transistors, on the other hand, are characterized by significant generation-recombination noise contributions to the total noise. For both types of transistors, the measured output noise is determined primarily by the noise sources in the polysilicon–monosilicon interface. The level of the 1/f noise is proportional to the square of the base current (I B 2 ) for both npn and pnp transistors. The contribution of the 1/f noise in the collector current is also estimated. The magnitude of the 1/f noise normalized to the square of the base current for devices with different emitter areas was found to be inversely proportional to the emitter area, but for the transistors with a large ratio of emitter perimeter to emitter area, the contribution of noise sources located in the emitter perimeter may be significant. For both pnp and npn transistors, 1/f noise was found to be independent of temperature, and for pnp transistors, generation-recombination noise decreases with increasing temperature.This publication has 23 references indexed in Scilit:
- Effects of emitter dimensions on low-frequency noisein double-polysilicon BJTsElectronics Letters, 1998
- Impact of polysilicon emitter interfacial layer engineering on the 1/f noise of bipolar transistorsIEEE Transactions on Electron Devices, 1996
- Low frequency noise in two-dimensional metal-semiconductor field effect transistorApplied Physics Letters, 1996
- Measurement and comparison of 1/f noise and g-r noise in silicon homojunction and III-V heterojunction bipolar transistorsIEEE Transactions on Electron Devices, 1996
- Low-frequency noise in polysilicon emitter bipolar transistorsIEEE Transactions on Electron Devices, 1995
- Reduction of 1f noise in polysilicon emitter bipolar transistorsSolid-State Electronics, 1995
- Low-frequency noise in modern bipolar transistors: impact of intrinsic transistor and parasitic series resistancesIEEE Transactions on Electron Devices, 1994
- Determination of the trap energy levels and the emitter area dependence of noise in polyemitter bipolar junction transistors from generation–recombination noise spectraCanadian Journal of Physics, 1992
- Strong Low-Frequency Noise in Polysilicon Emitter Bipolar Transistors with Interfacial Oxide due to Fluctuations in Tunneling ProbabilitiesJapanese Journal of Applied Physics, 1992
- Fundamental 1/ƒ noise in silicon bipolar transistorsSolid-State Electronics, 1988