Effects of boron profiles on the open circuit voltage of p-i-n and n-i-p amorphous silicon solar cells

2 June 1986

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 48 (22) , 1538-1539
https://doi.org/10.1063/1.96861

Abstract

Data are presented showing that boron carryover into the i layer is responsible for the commonly observed difference in open circuit voltage between p‐i‐n and n‐i‐p amorphous silicon solar cells. It is proposed that the lower voltage samples are being limited by surface recombination at the p/i interface and that boron carryover reduces this recombination current. The V_oc is then able to rise to the point where it is limited by the bulk recombination current.

Keywords

This publication has 2 references indexed in Scilit:

Tunneling Contributions to NiP and Pin Hydrogenated Amorphous Silicon Devices
MRS Proceedings, 1985
Origin of the difference in the open circuit voltage between p-i-n type and n-i-p type hydrogenated amorphous silicon solar cells
Applied Physics Letters, 1983