Amorphous silicon as a passivant for crystalline silicon
- 15 January 1979
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 34 (2) , 156-157
- https://doi.org/10.1063/1.90711
Abstract
Hydrogenated amorphous silicon deposited on a p‐n junction in crystalline silicon causes a two‐order‐of‐magnitude reduction in leakage current compared to the performance of a state‐of‐the‐art thermal oxide passivant.Keywords
This publication has 3 references indexed in Scilit:
- Hydrogenation and dehydrogenation of amorphous and crystalline siliconApplied Physics Letters, 1978
- Optical and photoconductive properties of discharge-produced amorphous siliconJournal of Applied Physics, 1977
- Photoluminescence of hydrogenated amorphous siliconApplied Physics Letters, 1977