Counter-doped MOSFETs of 4H-SiC
- 1 December 1999
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 20 (12) , 624-626
- https://doi.org/10.1109/55.806105
Abstract
In this paper, we investigate the effect of counter-doping of nitrogen at the channel region of epitaxial n-channel 4H-SiC MOSFETs on the channel mobility and the threshold voltage. From this study, we have found that the channel mobility steeply improves as the nitrogen dose increases. At a dose of 2/spl times/ or 2.5/spl times/10/sup 12/ cm/sup -2/ the enhancement MOSFET has achieved an effective channel mobility of 20 cm/sup 2//Vs or a field effect mobility of 38 cm/sup 2//Vs at a peak.Keywords
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