Lateral n-channel inversion mode 4H-SiC MOSFETs

1 July 1998

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 19 (7) , 228-230
https://doi.org/10.1109/55.701425

Abstract

Advances in MOS devices on silicon carbide (SiC) have been greatly hampered by the low inversion layer mobilities. In this paper, the electrical characteristics of lateral n-channel MOSFETs fabricated on 4H-SiC are reported for the first time. Inversion layer electron mobilities of 165 cm/sup 2//V/spl middot/s in 4H-SiC MOSFETs were measured at room temperature. These MOSFETs were fabricated using a low temperature deposited oxide, with subsequent oxidation anneal, as the gate dielectric.

Keywords

This publication has 7 references indexed in Scilit:

Silicon carbide MOSFET technology
Solid-State Electronics, 1996
Improved oxidation procedures for reduced SiO2/SiC defects
Journal of Electronic Materials, 1996
On the presence of aluminum in thermally grown oxides on 6H-silicon carbide [power MOSFETs]
IEEE Electron Device Letters, 1996
Electrical and physico-chemical characterizations of the interface
Microelectronic Engineering, 1995
Conductivity Anisotropy in Epitaxial 6H and 4H Sic
MRS Proceedings, 1994
Comparison of 6H-SiC, 3C-SiC, and Si for power devices
IEEE Transactions on Electron Devices, 1993
The potential of diamond and SiC electronic devices for microwave and millimeter-wave power applications
Proceedings of the IEEE, 1991