Deep-level defects and diffusion length measurements in low energy proton-irradiated GaAs
- 1 March 1980
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 9 (2) , 335-354
- https://doi.org/10.1007/bf02670853
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Identification of the defect state associated with a gallium vacancy in GaAs andPhysical Review B, 1977
- Nonradiative capture and recombination by multiphonon emission in GaAs and GaPPhysical Review B, 1977
- Study of electron traps in n-GaAs grown by molecular beam epitaxyJournal of Applied Physics, 1976
- A study of deep levels in GaAs by capacitance spectroscopyJournal of Electronic Materials, 1975
- Deep levels in gallium arsenide by capacitance methodsApplied Physics A, 1974
- Fast capacitance transient appartus: Application to ZnO and O centers in GaP p-n junctionsJournal of Applied Physics, 1974
- Defect creation in electronic materialsProceedings of the IEEE, 1974
- Analyses of transient capacitance experiments for AuGaAs Schottky barrier diodes in the presence of deep impurities and the interfacial layerSolid-State Electronics, 1973
- Vacancy Association of Defects in Annealed GaAsApplied Physics Letters, 1971
- Radiation Effects in GaAsJournal of Applied Physics, 1963